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Two-dimensional-materials-based transistors using hexagonal boron nitride dielectrics and metal gate electrodes with high cohesive energy

https://doi.org/10.1038/s41928-024-01233-w

Shen, Yaqing; Zhu, Kaichen; Xiao, Yiping; Waldhör, Dominic; Basher, Abdulrahman H; Knobloch, Theresia; Pazos, Sebastian; Liang, Xianhu; Zheng, Wenwen; Yuan, Yue; et al (October 2024, Nature Electronics)

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